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型号	厂家	封装	描述	日期

BUZ22			[替换型号]N-FET 100V 34A 125W 0.055	20040301
BUZ221	Infineon Technologies AG		TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 5.5A I(D) \| TO-204AA	20031026
BUZ220	Infineon Technologies AG		TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 6.5A I(D) \| TO-204AA	20031026
BUZ22	Infineon Technologies AG		TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 34A I(D) \| TO-220AB	20031026
BUZ221	Infineon Technologies AG		TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 5.5A I(D) \| TO-204AA	20031022
BUZ220	Infineon Technologies AG		TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 6.5A I(D) \| TO-204AA	20031022
BUZ22SMD	Infineon(siemens)		Power MOSFET. 100V.D睵AK . RDSon=0.055 Ohm. 34A. NL	20030310
BUZ22	Infineon(siemens)		Power MOSFET. 100V. TO-220. RDSon=0.055 Ohm. 34A. NL	20030310
BUZ221			N-Channel Enhancement MOSFET	20020807
BUZ220			N-Channel Enhancement MOSFET	20020807
BUZ22			N-Channel Enhancement MOSFET	20020807
BUZ22			[替换型号]N-FET 100V 34A 125W 0.055	20010221
BUZ22	Siemens		[替换型号]Functional Equivalent:Toshiba 2SK2466	20120118
BUZ22	Infineon		[替换型号]Compatible Equivalent:IRF IRF540N	20120118
BUZ22 SMD	Infineon		[替换型号]Compatible Equivalent:ST STB30NF10T4	20120118
BUZ22	Siemens	TO-220AB	[替换型号]Replacement:Toshiba 2SK2466	20120101
BUZ22			[替换型号]Replacement:ST STP33N10	20120101
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